Invention Grant
- Patent Title: IC structure including porous semiconductor layer under trench isolation
-
Application No.: US17450003Application Date: 2021-10-05
-
Publication No.: US12027582B2Publication Date: 2024-07-02
- Inventor: Uzma B. Rana , Steven M. Shank , Anthony K. Stamper
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US NY Malta
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/66 ; H01L27/088 ; H01L27/12

Abstract:
An integrated circuit (IC) structure includes an active device over a bulk semiconductor substrate, and an isolation structure around the active device in the bulk semiconductor substrate. The isolation structure includes: a polycrystalline isolation layer under the active device, a trench isolation adjacent the active device, and a porous semiconductor layer between the trench isolation and the bulk semiconductor substrate.
Information query
IPC分类: