Invention Grant
- Patent Title: Substrate structure and method for manufacturing the same
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Application No.: US17707801Application Date: 2022-03-29
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Publication No.: US12040261B2Publication Date: 2024-07-16
- Inventor: Syu-Tang Liu , Tsung-Tang Tsai , Huang-Hsien Chang , Ching-Ju Chen
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: FOLEY & LARDNER LLP
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L21/48 ; H01L23/00 ; H01L23/13 ; H01L23/498 ; H05K1/11

Abstract:
A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.
Public/Granted literature
- US20220223507A1 SUBSTRATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-07-14
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