Invention Grant
- Patent Title: Endpoint detection in low open area and/or high aspect ratio etch applications
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Application No.: US17675900Application Date: 2022-02-18
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Publication No.: US12046522B2Publication Date: 2024-07-23
- Inventor: Lei Lian , Quentin Walker , Zefang Wang , Shinichi Koseki
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01J1/18 ; H01J37/32
Abstract:
Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (
Public/Granted literature
- US20230268235A1 ENDPOINT DETECTION IN LOW OPEN AREA AND/OR HIGH ASPECT RATIO ETCH APPLICATIONS Public/Granted day:2023-08-24
Information query
IPC分类:
