专利检索 ap:("Applied Materials, Inc.") AND inv:"Zefang Wang" 第 1 页

1.

发明授权
Endpoint detection in low open area and/or high aspect ratio etch applications 有权

公开(公告)号：US12046522B2

公开(公告)日：2024-07-23

申请号：US17675900

申请日：2022-02-18

申请人： Applied Materials, Inc.

发明人： Lei Lian , Quentin Walker , Zefang Wang , Shinichi Koseki

IPC分类号： H01L21/66 , G01J1/18 , H01J37/32

CPC分类号： H01L22/26 , G01J1/18 , H01J37/32963 , H01J2237/24507 , H01J2237/334

摘要： Disclosed herein is a method for determining the endpoint of an etch operation used for forming high aspect ratio features and/or over low open area (