Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17507567Application Date: 2021-10-21
-
Publication No.: US12046598B2Publication Date: 2024-07-23
- Inventor: Wenzhen Wang , Hirotaka Takeno , Atsushi Okamoto
- Applicant: Socionext Inc.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: Rimon P.C.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L23/528 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H01L29/786

Abstract:
A semiconductor device includes a first power supply line, a second power supply line, a first ground line, a switch circuit connected to the first and the second power supply line, and a switch control circuit connected to the first ground line and the first power supply line. The switch circuit includes a first and a second transistor of a first conductive type. A first gate electrode of the first transistor is connected to a second gate electrode of the second transistor. The switch control circuit includes a third transistor of a second conductive type, and a fourth transistor of a third conductive type. A third gate electrode of the third transistor is connected to a fourth gate electrode of the fourth transistor. A semiconductor device includes a signal line that electrically connects a connection point between the third and fourth transistor to the first and second gate electrode.
Information query
IPC分类: