Invention Grant
- Patent Title: Semiconductor device with strain relaxed layer
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Application No.: US18135203Application Date: 2023-04-17
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Publication No.: US12046640B2Publication Date: 2024-07-23
- Inventor: Yu-Ming Hsu , Yu-Chi Wang , Yen-Hsing Chen , Tsung-Mu Yang , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1911042514.2 2019.10.30
- The original application number of the division: US17685400 2022.03.03
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/778
Abstract:
A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
Public/Granted literature
- US20230253457A1 SEMICONDUCTOR DEVICE WITH STRAIN RELAXED LAYER Public/Granted day:2023-08-10
Information query
IPC分类:
