公开(公告)号：US12224339B2

公开(公告)日：2025-02-11

申请号：US17735100

申请日：2022-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US11563088B2

公开(公告)日：2023-01-24

申请号：US16708448

申请日：2019-12-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220262942A1

公开(公告)日：2022-08-18

申请号：US17735100

申请日：2022-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/267 ,  H01L29/15 ,  H01L29/20

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US20210134957A1

公开(公告)日：2021-05-06

申请号：US16708448

申请日：2019-12-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US11355626B2

公开(公告)日：2022-06-07

申请号：US16574094

申请日：2019-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/267 ,  H01L29/15 ,  H01L29/20 ,  H01L29/04

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US12046639B2

公开(公告)日：2024-07-23

申请号：US17683288

申请日：2022-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20230253457A1

公开(公告)日：2023-08-10

申请号：US18135203

申请日：2023-04-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20210151591A1

公开(公告)日：2021-05-20

申请号：US16711451

申请日：2019-12-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Yu-Chi Wang ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, in which the buffer layer includes a first buffer layer and a second buffer layer. Preferably, the first buffer layer includes a first layer of the first buffer layer comprising AlyGa1-yN on the substrate and a second layer of the first buffer layer comprising AlxGa1-xN on the first layer of the first buffer layer. The second buffer layer includes a first layer of the second buffer layer comprising AlwGa1-wN on the first buffer layer and a second layer of the second buffer layer comprising AlzGa1-zN on the first layer of the second buffer layer, in which x>z>y>w.

公开(公告)号：US20210066487A1

公开(公告)日：2021-03-04

申请号：US16574094

申请日：2019-09-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/267 ,  H01L29/15

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

公开(公告)号：US12046640B2

公开(公告)日：2024-07-23

申请号：US18135203

申请日：2023-04-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.