- 专利标题: Planar and non-planar FET-based electrostatic discharge protection devices
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申请号: US17020507申请日: 2020-09-14
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公开(公告)号: US12051691B2公开(公告)日: 2024-07-30
- 发明人: Po-Lin Peng , Han-Jen Yang , Jam-Wem Lee , Li-Wei Chu
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; H01L23/528 ; H01L27/07 ; H01L29/06 ; H01L29/10 ; H01L29/861
摘要:
An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.
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