The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive layer is over the first capacitor dielectric layer, a second capacitor dielectric layer comprising a second dielectric material is disposed over the second conductive layer, and a third conductive layer is over the second capacitor dielectric layer. A first barrier layer is disposed between an upper surface of the first conductive layer and a lower surface of the first capacitor dielectric layer.