公开(公告)号：US12062686B2

公开(公告)日：2024-08-13

申请号：US16991385

申请日：2020-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guo-Jyun Luo ,  Chen-Chien Chang ,  Chiu-Hua Chung ,  Shiuan-Jeng Lin ,  Han-Zong Pan

IPC: H01L21/285 ,  H01L27/06 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L28/40 ,  H01L21/2855 ,  H01L27/0629 ,  H01L27/0805

Abstract: The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive layer is over the first capacitor dielectric layer, a second capacitor dielectric layer comprising a second dielectric material is disposed over the second conductive layer, and a third conductive layer is over the second capacitor dielectric layer. A first barrier layer is disposed between an upper surface of the first conductive layer and a lower surface of the first capacitor dielectric layer.

公开(公告)号：US20200373380A1

公开(公告)日：2020-11-26

申请号：US16991385

申请日：2020-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guo-Jyun Luo ,  Chen-Chien Chang ,  Chiu-Hua Chung ,  Shiuan-Jeng Lin ,  Han-Zong Pan

IPC: H01L49/02 ,  H01L27/08 ,  H01L27/06 ,  H01L21/285

Abstract: The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive layer is over the first capacitor dielectric layer, a second capacitor dielectric layer comprising a second dielectric material is disposed over the second conductive layer, and a third conductive layer is over the second capacitor dielectric layer. A first barrier layer is disposed between an upper surface of the first conductive layer and a lower surface of the first capacitor dielectric layer.

公开(公告)号：US10748986B2

公开(公告)日：2020-08-18

申请号：US15940075

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Guo-Jyun Luo ,  Shiuan-Jeng Lin ,  Chiu-Hua Chung ,  Chen-Chien Chang ,  Han-Zong Pan

IPC: H01L49/02 ,  H01L21/285 ,  H01L27/06 ,  H01L27/08

Abstract: A semiconductor device structure and the formation method thereof are provided. The semiconductor device structure includes a semiconductor substrate and a first capacitor and a second capacitor over the semiconductor substrate. The first capacitor has a first capacitor dielectric layer, and the second capacitor has a second capacitor dielectric layer. The first capacitor dielectric layer is between the second capacitor dielectric layer and the semiconductor substrate. The first capacitor and the second capacitor are electrically connected in parallel. The first capacitor has a first linear temperature coefficient and a first quadratic voltage coefficient. The second capacitor has a second linear temperature coefficient and a second quadratic voltage coefficient. One or both of a first ratio of the first linear temperature coefficient to the second linear temperature coefficient and a second ratio of the first quadratic voltage coefficient to the second quadratic voltage coefficient is negative.