Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18312372Application Date: 2023-05-04
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Publication No.: US12069958B2Publication Date: 2024-08-20
- Inventor: Tai-Yen Peng , Hui-Hsien Wei , Wei-Chih Wen , Pin-Ren Dai , Chien-Min Lee , Sheng-Chih Lai , Han-Ting Tsai , Chung-Te Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H10N50/01
- IPC: H10N50/01 ; G11C11/16 ; H10B61/00 ; H10N50/10 ; H10N50/80

Abstract:
A device includes a resistance switching layer, a capping layer, a top electrode, a first spacer, and a second spacer. The resistance switching layer is over a substrate. The capping layer is over the resistance switching layer. The top electrode is over the capping layer. The first spacer lines the resistance switching layer and the capping layer. The second spacer lines the first spacer. The capping layer is in contact with the top electrode, the first spacer, and the second spacer.
Public/Granted literature
- US20230276712A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-08-31
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