Invention Grant
- Patent Title: Memory block erase protocol
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Application No.: US17898333Application Date: 2022-08-29
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Publication No.: US12079481B2Publication Date: 2024-09-03
- Inventor: Chun Sum Yeung , Deping He , Ting Luo , Guang Hu , Jonathan S. Parry
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: LOWENSTEIN SANDLER LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Described are systems and methods related to a memory block erase protocol. An example system includes a memory device having a memory array including a plurality of memory cells. The system further includes a processing device coupled to the memory device. The processing device is to determine a value of a metric associated with the memory array. Responsive to determine that the value of the metric is below a predetermined threshold, the processing device is further to initiate an erase protocol of the memory device. The processing device is further to erase sets of memory cells associated with one or more memory blocks of the memory array. The processing device is further to receive a programming command directed to the first set of memory cells. The processing device is further to perform a programming operation with respect to a set of memory cells responsive to receiving the programming command.
Public/Granted literature
- US20240069735A1 MEMORY BLOCK ERASE PROTOCOL Public/Granted day:2024-02-29
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