SERIAL PASS-THROUGH TECHNIQUES FOR MEMORY DEVICE INTERFACES

    公开(公告)号:US20250118344A1

    公开(公告)日:2025-04-10

    申请号:US18774431

    申请日:2024-07-16

    Abstract: Methods, systems, and devices for serial pass-through techniques for memory device interfaces are described. Memory interface circuitry may be configured to receive a command via a first interface having a first set of terminals to configure the memory interface circuitry for a pass-through mode. As part of the pass-through mode, the memory interface circuitry may receive data from an external device via the first interface and output the data to one or more memory devices via a second interface having a second set of terminals. In some examples, the received data may be associated with a write burst, in which the memory interface circuitry may serially receive multiple portions of the data to write to a buffer of the memory interface circuitry. After reaching a threshold quantity of data, the buffer may output the portions of the data to the one or more memory devices via the second interface.

    HOST RECOVERY FOR A STUCK CONDITION
    5.
    发明公开

    公开(公告)号:US20240345750A1

    公开(公告)日:2024-10-17

    申请号:US18638471

    申请日:2024-04-17

    Abstract: Methods, systems, and devices for host recovery for a stuck condition of a memory system are described. The host system may transmit a first command for the memory system to transition from a first power mode to a second power mode (e.g., low-power mode). In some cases, the host system may transmit a second command for the memory system to exit the second power mode shortly after transmitting the first command. The host system may activate a timer associated with a time-out condition for exiting the second power mode and may determine that a duration indicated by the timer expires. In some examples, the host system may transmit a third command for the memory system to perform a hardware reset operation based on determining that the duration of the timer expires.

    PURGING DATA AT A MEMORY DEVICE
    6.
    发明公开

    公开(公告)号:US20240330519A1

    公开(公告)日:2024-10-03

    申请号:US18624775

    申请日:2024-04-02

    Abstract: Methods, systems, and devices for purging data from a memory device are described. A memory system may receive, from a host system, a command to write data to an address storing an encryption key in a first portion of the memory system that is configured to store secure information (e.g., a Replay Protected Memory Block). The encryption key may be configured to encrypt data associated with the host system that is stored in a second portion of the memory system. The memory system may then receive an indication of a purge command from the host system. The memory system may execute the purge command by transferring data from the first portion of the memory system to a third portion of the memory system configured to store secure information and erasing the data from the first portion of the memory system.

    SHALLOW HIBERNATE POWER STATE
    7.
    发明公开

    公开(公告)号:US20240329721A1

    公开(公告)日:2024-10-03

    申请号:US18597462

    申请日:2024-03-06

    CPC classification number: G06F1/3275 G06F1/3287

    Abstract: Methods, systems, and devices for shallow hibernate power state are described. A memory system may include a memory array and a controller. The memory system may transition from a first power state having a first current to a second power state having a second current less than the first current, where the first power state is associated with executing received commands and the second power state is associated with deactivating one or more components of the memory array. The memory system may initiate a timer after transitioning from the first power state to the second power state. The memory system may determine the timer satisfies a threshold and transition from the second power state to a third power state having a third current less than the second current based on the timer satisfying the threshold.

    Memory device with multiple input/output interfaces

    公开(公告)号:US12079479B2

    公开(公告)日:2024-09-03

    申请号:US17672026

    申请日:2022-02-15

    CPC classification number: G06F3/0611 G06F3/0604 G06F3/0659 G06F3/0679

    Abstract: A memory device including a first plane group comprising a first plane, a second plane group comprising a second plane, a first input/output (I/O) interface configured to access the first plane group, and a second I/O interface configured to access the second plane group. The memory device further includes a controller operatively coupled to the first I/O interface via a first channel and operatively coupled to the second I/O interface via a second channel. The controller can transmit, via the first channel to the first I/O interface, a first command to execute a first memory access operation associated with the first plane. The controller can transmit, via the second channel to the second I/O interface, a second command to execute a second memory access operation associated with the second plane.

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