Invention Grant
- Patent Title: Method of controlling oxygen vacancy concentration in a semiconducting metal oxide
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Application No.: US17571858Application Date: 2022-01-10
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Publication No.: US12080801B2Publication Date: 2024-09-03
- Inventor: Edmund G. Seebauer
- Applicant: The Board of Trustees of the University of Illinois
- Applicant Address: US IL Urbana
- Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Current Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
- Current Assignee Address: US IL Urbana
- Agency: Crowell & Moring LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; C23C22/82 ; C23C22/83 ; C23F1/30 ; H01L21/3213 ; H01L21/67 ; H01L27/12 ; H01L29/786
Abstract:
A method of controlling oxygen vacancy concentration in a semiconducting metal oxide includes exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase. During the exposure, a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen. The atomic oxygen is injected into and diffuses through the crystalline metal oxide, forming isolated oxygen interstitials and oxygen defect complexes. The isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide.
Public/Granted literature
- US20220231171A1 METHOD OF CONTROLLING OXYGEN VACANCY CONCENTRATION IN A SEMICONDUCTING METAL OXIDE Public/Granted day:2022-07-21
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