Invention Grant
- Patent Title: Method of forming chromium nitride layer and structure including the chromium nitride layer
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Application No.: US17227621Application Date: 2021-04-12
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Publication No.: US12087586B2Publication Date: 2024-09-10
- Inventor: Qi Xie , Eric James Shero , Charles Dezelah , Giuseppe Alessio Verni , Petri Raisanen
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; C23C16/34 ; C23C16/455 ; C23C16/52 ; H01L29/49

Abstract:
Methods and systems for depositing chromium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a deposition process, depositing a chromium nitride layer onto a surface of the substrate. The deposition process can include providing a chromium precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The deposition process may be a thermal cyclical deposition process.
Public/Granted literature
- US20210327715A1 METHOD OF FORMING CHROMIUM NITRIDE LAYER AND STRUCTURE INCLUDING THE CHROMIUM NITRIDE LAYER Public/Granted day:2021-10-21
Information query
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