Invention Grant
- Patent Title: Semiconductor device and method of manufacture
-
Application No.: US17120499Application Date: 2020-12-14
-
Publication No.: US12087637B2Publication Date: 2024-09-10
- Inventor: Chung-Chiang Wu , Hsin-Han Tsai , Wei-Chin Lee , Chia-Ching Lee , Hung-Chin Chung , Cheng-Lung Hung , Da-Yuan Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16193906 2018.11.16
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/027 ; H01L21/28 ; H01L21/285 ; H01L21/3213 ; H01L21/8238 ; H01L27/088 ; H01L27/092 ; H01L29/40 ; H01L29/423 ; H01L29/49 ; H01L29/66
Abstract:
Semiconductor devices and methods of manufacturing semiconductor devices with differing threshold voltages are provided. In embodiments the threshold voltages of individual semiconductor devices are tuned through the removal and placement of differing materials within each of the individual gate stacks within a replacement gate process, whereby the removal and placement helps keep the overall process window for a fill material large enough to allow for a complete fill.
Public/Granted literature
- US20210098301A1 Semiconductor Device and Method of Manufacture Public/Granted day:2021-04-01
Information query
IPC分类:
