Invention Grant
- Patent Title: Method and system for recognizing and addressing plasma discharge during semiconductor processes
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Application No.: US17872941Application Date: 2022-07-25
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Publication No.: US12100604B2Publication Date: 2024-09-24
- Inventor: Chih-Yu Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- The original application number of the division: US16836639 2020.03.31
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G06T1/00 ; G06T7/00 ; H01J37/32
Abstract:
A plasma discharge detection system detects undesirable plasma discharge events within a semiconductor process chamber. The plasma discharge detection system includes one or more cameras positioned around the semiconductor process chamber. The cameras capture images from within the semiconductor process chamber. The plasma discharge detection system includes a control system that receives the images from the cameras. The control system analyzes the images and detects plasma discharge within the semiconductor process chamber based on the images. The control system can adjust a semiconductor process in real time responsive to detecting the plasma discharge.
Public/Granted literature
- US20220359244A1 METHOD AND SYSTEM FOR RECOGNIZING AND ADDRESSING PLASMA DISCHARGE DURING SEMICONDUCTOR PROCESSES Public/Granted day:2022-11-10
Information query
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