- 专利标题： Techniques for controlling precursors in chemical deposition processes
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申请号： US18208084申请日： 2023-06-09
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公开(公告)号： US12104253B2公开(公告)日： 2024-10-01
- 发明人: Elaina Babayan , Sarah White , Vijay Venugopal , Jonathan Bakke
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 代理机构： KDW Firm PLLC
- 分案原申请号： US17012980 2020.09.04
- 主分类号： C23C16/52
- IPC分类号： C23C16/52 ; C23C16/448 ; C23C16/455 ; G01F1/00 ; G05D11/00 ; G05D11/13 ; G05D16/00 ; G05D16/04 ; H01L21/00 ; H01L21/66 ; H01L21/67
摘要：
An apparatus for controlling precursor flow. The apparatus may include a processor; and a memory unit coupled to the processor, including a flux control routine. The flux control routine may be operative on the processor to monitor the precursor flow and may include a flux calculation processor to determine a precursor flux value based upon a change in detected signal intensity received from a cell of a gas delivery system to deliver a precursor.
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