- 专利标题: Semiconductor package with dual sides of metal routing
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申请号: US17881981申请日: 2022-08-05
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公开(公告)号: US12113025B2公开(公告)日: 2024-10-08
- 发明人: Shin-Puu Jeng , Shuo-Mao Chen , Hsien-Wen Liu , Po-Yao Chuang , Feng-Cheng Hsu , Po-Yao Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 分案原申请号: US15908417 2018.02.28
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L25/00 ; H01L25/10 ; H01L21/48 ; H01L25/065
摘要:
A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.
公开/授权文献
- US20220375843A1 Semiconductor Package with Dual Sides of Metal Routing 公开/授权日:2022-11-24
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