公开(公告)号：US12224266B2

公开(公告)日：2025-02-11

申请号：US18501314

申请日：2023-11-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Po-Yao Chuang ,  Shuo-Mao Chen

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

Abstract: An embodiment is a structure including a first semiconductor device and a second semiconductor device, a first set of conductive connectors mechanically and electrically bonding the first semiconductor device and the second semiconductor device, a first underfill between the first and second semiconductor devices and surrounding the first set of conductive connectors, a first encapsulant on at least sidewalls of the first and second semiconductor devices and the first underfill, and a second set of conductive connectors electrically coupled to the first semiconductor device, the second set of conductive connectors being on an opposite side of the first semiconductor device as the first set of conductive connectors.

公开(公告)号：US12199084B2

公开(公告)日：2025-01-14

申请号：US18525976

申请日：2023-12-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Hao Tsai ,  Techi Wong ,  Po-Yao Chuang ,  Shin-Puu Jeng ,  Meng-Wei Chou ,  Meng-Liang Lin

IPC: H01L25/18 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

公开(公告)号：US12191261B2

公开(公告)日：2025-01-07

申请号：US17870338

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Chuang ,  Meng-Wei Chou ,  Shin-Puu Jeng

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498

Abstract: Semiconductor devices and method of manufacture are provided. In embodiments a conductive connector is utilized to provide an electrical connection between a substrate and an overlying shield. The conductive connector is placed on the substrate and encapsulated with an encapsulant. Once encapsulated, an opening is formed through the encapsulant to expose a portion of the conductive connector. The shield is deposited through the encapsulant to make an electrical connection to the conductive connector.

公开(公告)号：US12166025B2

公开(公告)日：2024-12-10

申请号：US17813873

申请日：2022-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Yi Yang ,  Po-Yao Chuang ,  Shin-Puu Jeng

IPC: H01L25/18 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/16 ,  H01L21/683

Abstract: A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

公开(公告)号：US20240387317A1

公开(公告)日：2024-11-21

申请号：US18788832

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chen Lai ,  Ming-Chih Yew ,  Shu-Shen Yeh ,  Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

Abstract: Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.

公开(公告)号：US20240379646A1

公开(公告)日：2024-11-14

申请号：US18780037

申请日：2024-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Puu Jeng ,  Techi Wong ,  Po-Yao Chuang ,  Shuo-Mao Chen ,  Meng-Wei Chou

IPC: H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065 ,  H01L27/01

Abstract: An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

公开(公告)号：US20240363543A1

公开(公告)日：2024-10-31

申请号：US18766974

申请日：2024-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Shen Yeh ,  Che-Chia Yang ,  Chia-Kuei Hsu ,  Po-Yao Lin ,  Shin-Puu Jeng ,  Chia-Hsiang Lin

IPC: H01L23/538 ,  H01L21/48 ,  H01L21/768 ,  H01L23/00

CPC classification number: H01L23/5384 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/76802 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/14

Abstract: A method includes forming a first dielectric layer, forming a first redistribution line including a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes depositing a conductive material into the via opening to form a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, and the second via is offset from a center line of the conductive bump.

公开(公告)号：US12094810B2

公开(公告)日：2024-09-17

申请号：US18340387

申请日：2023-06-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Kuei Hsu ,  Ming-Chih Yew ,  Po-Yao Lin ,  Shuo-Mao Chen ,  Feng-Cheng Hsu ,  Shin-Puu Jeng

IPC: H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/49838 ,  H01L24/81 ,  H01L25/0655 ,  H01L25/18 ,  H01L2224/81815

Abstract: A method includes forming a redistribution structure, which formation process includes forming a plurality of dielectric layers over a carrier, forming a plurality of redistribution lines extending into the plurality of dielectric layers, and forming a reinforcing patch over the carrier. The method further includes bonding a package component to the redistribution structure, with the package component having a peripheral region overlapping a portion of the reinforcing patch. And de-bonding the redistribution structure and the first package component from the carrier.

公开(公告)号：US20240304533A1

公开(公告)日：2024-09-12

申请号：US18668922

申请日：2024-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/498 ,  G06F30/3953 ,  G06F119/18 ,  H01L23/00

CPC classification number: H01L23/49816 ,  G06F30/3953 ,  H01L24/16 ,  H01L24/81 ,  G06F2119/18 ,  H01L2224/81815 ,  H01L2924/3512 ,  H01L2924/3841

Abstract: A structure includes a first package component including a first conductive pad, and a second package component overlying the first package component. The second package component includes a surface dielectric layer, and a conductive bump protruding lower than the surface dielectric layer. The first conductive bump includes a first sidewall facing away from a center of the first package component, and a second sidewall facing toward the center. A solder bump joins the first conductive pad to the first conductive bump. The solder bump contacts the first sidewall. An underfill is between the first package component and the second package component, and the underfill contacts the second sidewall.

公开(公告)号：US20240290755A1

公开(公告)日：2024-08-29

申请号：US18654794

申请日：2024-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsien-Wei Chen ,  Shin-Puu Jeng

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/48 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L23/481 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/16227 ,  H01L2225/06517

Abstract: Three dimensional structures and methods are provided in which capacitors are formed separately from a first semiconductor device and then connected to the first semiconductor device. For example, a capacitor chip is provided and then bonded to a first semiconductor die. The capacitor chip and the first semiconductor die are encapsulated with a first encapsulant, and one of the capacitor chips and the first semiconductor die are thinned to expose through vias.