Invention Grant
- Patent Title: Semiconductor package with dual sides of metal routing
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Application No.: US17881981Application Date: 2022-08-05
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Publication No.: US12113025B2Publication Date: 2024-10-08
- Inventor: Shin-Puu Jeng , Shuo-Mao Chen , Hsien-Wen Liu , Po-Yao Chuang , Feng-Cheng Hsu , Po-Yao Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15908417 2018.02.28
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/768 ; H01L23/00 ; H01L23/31 ; H01L23/498 ; H01L25/00 ; H01L25/10 ; H01L21/48 ; H01L25/065

Abstract:
A method includes forming a redistribution structure over a carrier, the redistribution structure having conductive features on a surface of the redistribution structure distal the carrier; forming a conductive pillar over the surface of the redistribution structure; attaching a die to the surface of the redistribution structure adjacent to the conductive pillar, where die connectors of the die are electrically coupled to the conductive features of the redistribution structure; and attaching a pre-made substrate to the conductive pillar through a conductive joint, where the conductive joint is on the conductive pillar and comprises a different material from the conductive pillar, where the conductive joint and the conductive pillar electrically couple the redistribution structure to the pre-made substrate.
Public/Granted literature
- US20220375843A1 Semiconductor Package with Dual Sides of Metal Routing Public/Granted day:2022-11-24
Information query
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