An electronic device, a memory device of the electronic device, and a write leveling method of the memory device are provided. The memory device is coupled to a memory controller to receive a data strobe signal DQS and a clock signal CLK. In a write leveling mode, the memory device provides a write leveling function to the memory controller, where the write leveling function includes a plurality of iterative operations. In each of the iterative operations, the memory controller sends a notification to the memory device, and the memory device sets up a strobe window based on the notification. The memory device samples the clock signal CLK based on a phase of the data strobe signal DQS in the strobe window, so as to send a sampling result back to the memory controller. The memory device is prohibited from sampling the clock signal CLK outside the strobe window.