- 专利标题： Transistors with reduced defect and methods of forming same
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申请号： US17680749申请日： 2022-02-25
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公开(公告)号： US12125892B2公开(公告)日： 2024-10-22
- 发明人: Shahaji B. More , Chandrashekhar Prakash Savant , Tien-Wei Yu , Chia-Ming Tsai
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US16669695 2019.10.31
- 主分类号： H01L29/51
- IPC分类号： H01L29/51 ; H01L21/28 ; H01L29/10 ; H01L29/161 ; H01L29/49 ; H01L29/66 ; H01L29/78
摘要：
A device includes a semiconductor region, an interfacial layer over the semiconductor region, the interfacial layer including a semiconductor oxide, a high-k dielectric layer over the interfacial layer, and an intermixing layer over the high-k dielectric layer. The intermixing layer includes oxygen, a metal in the high-k dielectric layer, and an additional metal. A work-function layer is over the intermixing layer. A filling-metal region is over the work-function layer.
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