- 专利标题： Air spacers in transistors and methods forming same
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申请号： US18343322申请日： 2023-06-28
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公开(公告)号： US12125897B2公开(公告)日： 2024-10-22
- 发明人: Yi-Lun Chen , Chao-Hsien Huang , Li-Te Lin , Chun-Hsiung Lin
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 分案原申请号： US15966603 2018.04.30
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8234 ; H01L21/8238 ; H01L29/51 ; H01L29/78
摘要：
A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
公开/授权文献
- US20230343649A1 Air Spacers in Transistors and Methods Forming Same 公开/授权日：2023-10-26
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