Invention Publication
- Patent Title: Air Spacers in Transistors and Methods Forming Same
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Application No.: US18343322Application Date: 2023-06-28
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Publication No.: US20230343649A1Publication Date: 2023-10-26
- Inventor: Yi-Lun Chen , Chao-Hsien Huang , Li-Te Lin , Chun-Hsiung Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- The original application number of the division: US15966603 2018.04.30
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/51 ; H01L29/78 ; H01L29/66 ; H01L21/8238
Abstract:
A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
Public/Granted literature
- US12125897B2 Air spacers in transistors and methods forming same Public/Granted day:2024-10-22
Information query
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