- 专利标题: Memory module, memory system, and operation method of memory controller
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申请号: US17895227申请日: 2022-08-25
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公开(公告)号: US12132501B2公开(公告)日: 2024-10-29
- 发明人: Wonjae Shin , Sung-Joon Kim , Heedong Kim , Minsu Bae , Ilwoong Seo , Mijin Lee , Seung Ju Lee , Hyan Suk Lee , Insu Choi , Kideok Han
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Fish & Richardson P.C.
- 优先权: KR 20210135051 2021.10.12
- 主分类号: H03M13/19
- IPC分类号: H03M13/19 ; G06F11/10 ; G11C5/04 ; G11C8/08 ; G11C11/408 ; G11C11/4096 ; G11C29/52 ; H03M13/00
摘要:
A memory system includes a memory module that includes a first memory device through a fourth memory device and a first error correction code (ECC) device, and a memory controller that exchanges first user data with each of the first memory device through the fourth memory device through 8 data lines and exchanges first ECC data with the first ECC device through 4 data lines. The memory controller includes an ECC engine that corrects a 32-random bit error of the first user data, based on the first ECC data.
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