公开(公告)号：US12132501B2

公开(公告)日：2024-10-29

申请号：US17895227

申请日：2022-08-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Wonjae Shin ,  Sung-Joon Kim ,  Heedong Kim ,  Minsu Bae ,  Ilwoong Seo ,  Mijin Lee ,  Seung Ju Lee ,  Hyan Suk Lee ,  Insu Choi ,  Kideok Han

IPC分类号： H03M13/19 ,  G06F11/10 ,  G11C5/04 ,  G11C8/08 ,  G11C11/408 ,  G11C11/4096 ,  G11C29/52 ,  H03M13/00

CPC分类号： H03M13/19 ,  G06F11/10 ,  G06F11/1012 ,  G06F11/1044 ,  G06F11/1048 ,  G11C8/08 ,  G11C11/4085 ,  G11C11/4096 ,  G11C29/52 ,  H03M13/611 ,  G11C5/04

摘要： A memory system includes a memory module that includes a first memory device through a fourth memory device and a first error correction code (ECC) device, and a memory controller that exchanges first user data with each of the first memory device through the fourth memory device through 8 data lines and exchanges first ECC data with the first ECC device through 4 data lines. The memory controller includes an ECC engine that corrects a 32-random bit error of the first user data, based on the first ECC data.