Invention Grant
- Patent Title: Memory cell and method used in forming a memory cells
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Application No.: US18506889Application Date: 2023-11-10
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Publication No.: US12133383B2Publication Date: 2024-10-29
- Inventor: Venkatakrishnan Sriraman , Dae Hong Eom , Ramanathan Gandhi , Donghua Li , Ashok Kumar Muthukumaran
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- The original application number of the division: US17391377 2021.08.02
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/66 ; H01L29/792 ; H10B41/27 ; H10B43/27
Abstract:
A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.
Public/Granted literature
- US20240081053A1 Memory Cell And Method Used In Forming A Memory Cells Public/Granted day:2024-03-07
Information query
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