公开(公告)号：US20230018127A1

公开(公告)日：2023-01-19

申请号：US17379338

申请日：2021-07-19

Applicant: Micron Technology, Inc.

Inventor： Ramanathan Gandhi ,  Sock Mui Poh ,  Dmitry Mikulik ,  Dae Hong Eom ,  Moonhyeong Han ,  Aireus O. Christensen ,  Chandrasekaran Venkatasubramanian

IPC: H01L27/1157 ,  H01L27/11565 ,  H01L25/065

Abstract: A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. At least one pillar extends through the stack structure. The at least one pillar includes at least one insulative material and a channel structure horizontally surrounding the at least one insulative material. The at least one channel structure comprises sub-regions of semiconductor material. At least one of the sub-regions exhibits a different microstructure than at least one other of the sub-regions. Additional microelectronic devices are also disclosed, as are related methods and electronic systems.

公开(公告)号：US11856766B2

公开(公告)日：2023-12-26

申请号：US17391377

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H10B43/27 ,  H10B41/27 ,  H01L29/788 ,  H01L29/792 ,  H01L29/66

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US12133383B2

公开(公告)日：2024-10-29

申请号：US18506889

申请日：2023-11-10

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/792 ,  H10B41/27 ,  H10B43/27

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US20240081053A1

公开(公告)日：2024-03-07

申请号：US18506889

申请日：2023-11-10

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H10B41/27 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US20230031891A1

公开(公告)日：2023-02-02

申请号：US17391377

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H01L27/11556 ,  H01L29/788 ,  H01L29/66 ,  H01L27/11582 ,  H01L29/792

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.