公开(公告)号：US11856766B2

公开(公告)日：2023-12-26

申请号：US17391377

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H10B43/27 ,  H10B41/27 ,  H01L29/788 ,  H01L29/792 ,  H01L29/66

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US12133383B2

公开(公告)日：2024-10-29

申请号：US18506889

申请日：2023-11-10

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H01L29/788 ,  H01L29/66 ,  H01L29/792 ,  H10B41/27 ,  H10B43/27

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US20240081053A1

公开(公告)日：2024-03-07

申请号：US18506889

申请日：2023-11-10

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H10B41/27 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

CPC classification number: H10B41/27 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792 ,  H10B43/27

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.

公开(公告)号：US20230031891A1

公开(公告)日：2023-02-02

申请号：US17391377

申请日：2021-08-02

Applicant: Micron Technology, Inc.

Inventor： Venkatakrishnan Sriraman ,  Dae Hong Eom ,  Ramanathan Gandhi ,  Donghua Li ,  Ashok Kumar Muthukumaran

IPC: H01L27/11556 ,  H01L29/788 ,  H01L29/66 ,  H01L27/11582 ,  H01L29/792

Abstract: A memory cell comprises channel material, charge-passage material, programmable material, a charge-blocking region, and a control gate. The programmable material comprises at least two regions comprising SiNx having a region comprising SiOy therebetween, where “x” is 0.5 to 3.0 and “y” is 1.0 to 3.0. Methods are disclosed.