A memory device having a switching device for a page buffer is provided, and includes a plurality of switching units coupled between a memory cell array and a sense amplification circuit of the page buffer. Each of the plurality of switching units further comprising: a high voltage element and a low voltage element that are connected in series to each other. A first end of the high voltage element is coupled to the sense amplification circuit, and a first end of the low voltage element is coupled to a common source line of the memory cell array. A second end of the high voltage element and a second end of the low voltage element are connected to each other and coupled to a corresponding bit line of the memory cell array. The common source line coupled to each of the plurality of switching units shares a common active region.