Invention Grant
- Patent Title: Resist compositions and semiconductor fabrication methods using the same
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Application No.: US16947515Application Date: 2020-08-05
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Publication No.: US12181799B2Publication Date: 2024-12-31
- Inventor: Thanh Cuong Nguyen , Daekeon Kim , Tsunehiro Nishi , Naoto Umezawa , Hyunwoo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0168997 20191217
- Main IPC: G03F7/004
- IPC: G03F7/004 ; C07C25/13 ; G03F7/038 ; G03F7/039 ; H01L21/027
Abstract:
Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.
Public/Granted literature
- US20210181628A1 RESIST COMPOSITIONS AND SEMICONDUCTOR FABRICATION METHODS USING THE SAME Public/Granted day:2021-06-17
Information query
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