公开(公告)号：US20230215723A1

公开(公告)日：2023-07-06

申请号：US18147733

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： EUNHYEA KO ,  Hoon Han ,  Soyoung Lee ,  Thanh Cuong Nguyen ,  Hiroyuki Uchiuzou ,  Kiyoshi Murata ,  Tomoharu Yoshino ,  Daekeon Kim ,  Younjoung Cho ,  Jiyu Choi ,  Byungkeun Hwang

IPC: H01L21/02 ,  C23C16/455 ,  C23C2/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01L21/02323 ,  H01L21/0226 ,  C23C16/45525 ,  C23C2/026 ,  H01L21/31116

Abstract: To manufacture an integrated circuit (IC) device, a structure in which a first material film including silicon atoms and nitrogen atoms and a second material film devoid of nitrogen atoms is formed on a substrate. A carbonyl compound having a functional group without an α-hydrogen is applied to the structure, and thus, an inhibitor is selectively formed only on an exposed surface of the first material film from among the first material film and the second material film.

公开(公告)号：US12181799B2

公开(公告)日：2024-12-31

申请号：US16947515

申请日：2020-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Thanh Cuong Nguyen ,  Daekeon Kim ,  Tsunehiro Nishi ,  Naoto Umezawa ,  Hyunwoo Kim

IPC: G03F7/004 ,  C07C25/13 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.