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公开(公告)号：US20250093772A1
公开(公告)日：2025-03-20
申请号：US18777777
申请日：2024-07-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chawon Koh , Hyo Jae Yoon , Tsunehiro Nishi , Gayeong Lim
Abstract: The present invention relates to PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PATTERNS USING A PHOTORESIST COMPOSITION. Disclosed is a photoresist composition including an organometallic compound including a ring including a metal, a first heteroatom coordinated to the metal, and a second heteroatom covalently bonded to the metal, and an aromatic ring substituted or fused to the ring; and a solvent.
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2.发明授权公开(公告)号：US12112948B2
公开(公告)日：2024-10-08
申请号：US16996372
申请日：2020-08-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chawon Koh , Soyeon Yoo , Sooyoung Choi , Tsunehiro Nishi , Kwangsub Yoon , Brian Cardineau , Kumagai Tomoya
IPC: G03F7/38 , G03F7/004 , H01L21/027
CPC classification number: H01L21/0274 , G03F7/0042 , G03F7/38
Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.
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公开(公告)号：US12181799B2
公开(公告)日：2024-12-31
申请号：US16947515
申请日：2020-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Thanh Cuong Nguyen , Daekeon Kim , Tsunehiro Nishi , Naoto Umezawa , Hyunwoo Kim
IPC: G03F7/004 , C07C25/13 , G03F7/038 , G03F7/039 , H01L21/027
Abstract: Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.
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公开(公告)号：US20230400764A1
公开(公告)日：2023-12-14
申请号：US18120248
申请日：2023-03-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Kyun Lee , Chawon Koh , Ye-Jin Ku , Tsunehiro Nishi , Hyunwoo Kim , Hyung-Ju Ahn
CPC classification number: G03F7/0042 , C07F7/2224 , G03F7/168
Abstract: A resist material is combined with a ligand containing four or more fluorine atoms and is represented by the following formula: [(R1M)iOjXk(OH)m] (OH)nR2p, wherein one of “R1” and “R2” is CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, the other of “R1” and “R2” is CaHc, CaFbHc, CaFbHcNd, CaFbHcPd, CaFbHcSd, CaFbHcOd, CaFbHcNdSe, CaFbHcPdSe, CaFbHcNdOe, or CaFbHcPdOe, “a” and “c” are each independently an integer of 0 to 20, “b” is an integer of 4 to 30, “d” and “e” are each independently an integer of 0 to 5, “M” is one metal selected from a specified list, “i” is an integer from 1 to 12, “j” is an integer of 1 to 14, “X” is a halogen selected from a specified list, “k” and “m” are each independently an integer of 0 to 6, and “n” and “p” are each independently an integer of 0 to 2.
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Patent Agency Ranking
公开(公告)号：US20210380612A1
公开(公告)日：2021-12-09
申请号：US17144242
申请日：2021-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chawon Koh , Moonil Jung , Tsunehiro Nishi , Kunwoo Baek , Mijeong Song , Jaehyun Kim , Seung Han
Abstract: Described herein are photoresist compositions comprising a metal structure including an organometallic compound, an organometallic nanoparticle, and/or an organometallic cluster; a C2 to C20 organic densifier including oxygen atoms; and a solvent. Also described herein are methods of using a photoresist composition.
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6.发明授权公开(公告)号：US11327398B2
公开(公告)日：2022-05-10
申请号：US16399473
申请日：2019-04-30
Applicant: Samsung Electronics Co., Ltd. , Inpria Corporation
Inventor： Chawon Koh , Tsunehiro Nishi , Brian Cardineau , Sangyoon Woo , Jason Stowers , Soo Young Choi
IPC: G03F7/004 , G03F7/11 , H01L21/027 , H01L21/311 , G03F7/20 , G03F7/32
Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.
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7.发明申请公开(公告)号：US20220059345A1
公开(公告)日：2022-02-24
申请号：US16996372
申请日：2020-08-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chawon Koh , Soyeon Yoo , Sooyoung Choi , Tsunehiro Nishi , Kwangsub Yoon , Brian Cardineau , Kumagai Tomoya
IPC: H01L21/027 , G03F7/004 , G03F7/38
Abstract: In a method of manufacturing an integrated circuit device, a photoresist layer is formed by coating a photoresist composition on a substrate having a main surface and an edge portion surrounding the main surface. A portion of the photoresist layer is removed from the edge portion of the substrate. After the portion of the photoresist layer is removed, the substrate is processed using a main treatment composition including an organic solvent, acid, and water.
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公开(公告)号：US20240255845A1
公开(公告)日：2024-08-01
申请号：US18543114
申请日：2023-12-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seungyeol Baek , Chawon Koh , Jiyoung Park , Tsunehiro Nishi , Wonjoon Son
CPC classification number: G03F7/0042 , C07F7/2284
Abstract: A photoresist composition includes an organometallic compound represented by Formula 1.
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9.发明授权公开(公告)号：US11599021B2
公开(公告)日：2023-03-07
申请号：US17736132
申请日：2022-05-04
Applicant: Samsung Electronics Co., Ltd. , Inpria Corporation
Inventor： Chawon Koh , Tsunehiro Nishi , Brian Cardineau , Sangyoon Woo , Jason Stowers , Soo Young Choi
IPC: G03F7/004 , G03F7/11 , H01L21/027 , H01L21/311 , G03F7/20 , G03F7/32
Abstract: Provided herein are photoresist compositions and methods for fabricating semiconductor devices using the same. A photoresist composition may include an organometallic material, a fluorine-containing material, and an organic solvent.
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