Invention Grant
- Patent Title: Clock signal return scheme for data read in page buffer of memory device
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Application No.: US18197526Application Date: 2023-05-15
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Publication No.: US12183404B2Publication Date: 2024-12-31
- Inventor: Shu Xie
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/04 ; G11C16/26 ; G11C16/32 ; G11C11/56 ; H10B41/35 ; H10B43/35

Abstract:
In certain aspects, a memory device includes a memory cell array and a peripheral circuit coupled to the memory cell array. The peripheral circuit includes frequency dividers and a clock path coupled to the frequency dividers. Each of the frequency dividers is configured to receive a clock signal and generate a clock return signal. The clock return signal corresponds to the clock signal. A period of the clock return signal is greater than the period of the clock signal. The clock path is configured to merge the clock return signals.
Public/Granted literature
- US20230282291A1 CLOCK SIGNAL RETURN SCHEME FOR DATA READ IN PAGE BUFFER OF MEMORY DEVICE Public/Granted day:2023-09-07
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