A memory device and a method for programming the same may include, applying program loops to a plurality of memory cells of the memory device to adjust threshold voltages of the plurality of memory cells to desired target states, each of the program loops including a program section and a verification section, programming the memory cells of a first page, storing a number of first program loops used to complete the programming of the memory cells of the first page to a first target state, programming the memory cells of a second page to the first target state, the second page adjacent to the first page, and performing a verification operation on the second page.