公开(公告)号：US12205656B2

公开(公告)日：2025-01-21

申请号：US17881009

申请日：2022-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dobin Kim ,  Wontaeck Jung ,  Jaehyuk Yang ,  Jinwoo Yang

IPC: G11C16/34 ,  G11C11/56 ,  G11C16/10 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: A memory device and a method for programming the same may include, applying program loops to a plurality of memory cells of the memory device to adjust threshold voltages of the plurality of memory cells to desired target states, each of the program loops including a program section and a verification section, programming the memory cells of a first page, storing a number of first program loops used to complete the programming of the memory cells of the first page to a first target state, programming the memory cells of a second page to the first target state, the second page adjacent to the first page, and performing a verification operation on the second page.