Invention Grant
- Patent Title: Through-silicon via in integrated circuit packaging
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Application No.: US18171072Application Date: 2023-02-17
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Publication No.: US12223252B2Publication Date: 2025-02-11
- Inventor: Fong-yuan Chang , Chin-Chou Liu , Chin-Her Chien , Cheng-Hung Yeh , Po-Hsiang Huang , Sen-Bor Jan , Yi-Kan Cheng , Hsiu-Chuan Shu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G06F30/394
- IPC: G06F30/394 ; G06F30/392 ; G06F30/398

Abstract:
The present disclosure describes structures and methods for a via structure for three-dimensional integrated circuit (IC) packaging. The via structure includes a middle portion that extends through a planar structure and a first end and a second end each connected to the middle portion and on a different side of the planar structure. One or more of the first end and the second end includes one or more of a plurality of vias and a pseudo metal layer.
Public/Granted literature
- US20230205967A1 THROUGH-SILICON VIA IN INTEGRATED CIRCUIT PACKAGING Public/Granted day:2023-06-29
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