- Patent Title: Semiconductor device and power off method of a semiconductor device
-
Application No.: US18205014Application Date: 2023-06-02
-
Publication No.: US12235698B2Publication Date: 2025-02-25
- Inventor: Ho-Yeon Jeon , Dae Hwan Kim , Young Hoon Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR10-2017-0108758 20170828
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F1/26 ; G06F1/28 ; G11C5/14 ; G06F1/30 ; G06F1/3203

Abstract:
A semiconductor device and a power-off method of the semiconductor device, the semiconductor device including a first power source group including first and second power sources, a second power source group including a third power source and a power sequence controller. The power sequence controller performs power-on operations and power-off operations of the first to third power sources. The power sequence controller starts a power-off operation of the first power source group at a first time, and starts a power-off operation of the second power source group when the power voltage of the first power source group becomes a first voltage or when a first reference time has passed from the first time.
Public/Granted literature
- US20230315179A1 SEMICONDUCTOR DEVICE AND POWER OFF METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2023-10-05
Information query