Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US18353498Application Date: 2023-07-17
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Publication No.: US12237380B2Publication Date: 2025-02-25
- Inventor: Chia-Ming Chang , Chi-Wen Liu , Cheng-Chien Li , Hsin-Chieh Huang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L21/02 ; H01L21/265 ; H01L29/06 ; H01L29/167 ; H01L29/417 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.
Public/Granted literature
- US20230361181A1 Semiconductor Device and Method of Forming the Same Public/Granted day:2023-11-09
Information query
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