Invention Grant
- Patent Title: Memory with parallel main and test interfaces
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Application No.: US17821676Application Date: 2022-08-23
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Publication No.: US12243610B2Publication Date: 2025-03-04
- Inventor: James Brian Johnson , Kunal R. Parekh , Brent Keeth , Eiichi Nakano , Amy Rae Griffin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C7/10 ; G11C29/56

Abstract:
Methods, systems, and devices for memory with parallel main and test interfaces are described. A memory die may be configured with parallel interfaces that may individually (e.g., separately) support evaluation operations (e.g., before or as part of assembly in a multiple-die stack) or access operations (e.g., after assembly in a multiple die stack). For example, a memory die may include a first set of one or more contacts that support communicating signaling with or via another memory die in a multiple-die stack. The memory die may also include a second set of one or more contacts that support probing for pre-assembly evaluations, which may be electrically isolated from the first set of contacts. By implementing such parallel interfaces, evaluation operations may be performed using the second set of contacts without damaging the first set of contacts, which may improve capabilities for supporting a multiple-die stack in a memory device.
Public/Granted literature
- US20240071556A1 MEMORY WITH PARALLEL MAIN AND TEST INTERFACES Public/Granted day:2024-02-29
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