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公开(公告)号:US20240403165A1
公开(公告)日:2024-12-05
申请号:US18667799
申请日:2024-05-17
Applicant: Micron Technology, Inc.
Inventor: Nathan A. Eckel , James Brian Johnson , Paul A. Laberge
Abstract: Methods, systems, and devices for information broadcast techniques for stacked memory architectures are described. A semiconductor system may include multiple instances of interface circuitry of a semiconductor die that are each operable for accessing a respective set of one or more memory arrays of one or more other semiconductor dies, as well as read-only storage for storing information that is common to the multiple instances of the interface circuitry. In some implementations, such read-only storage may include one-time programmable memory elements (e.g., fuses, antifuses) that are located in at least one of the one or more other semiconductor dies, and are accessible by each of the multiple instances of interface circuitry. The read-only storage may store information that supports common aspects of interface circuitry operations such as initialization operations, evaluation operations, configuration operations, access operations, or other operations, which may be broadcast to the multiple instances of interface circuitry.
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公开(公告)号:US11614875B2
公开(公告)日:2023-03-28
申请号:US17142837
申请日:2021-01-06
Applicant: Micron Technology, Inc.
Inventor: Brent Keeth , James Brian Johnson
IPC: G11C7/10 , G06F3/06 , H01L23/538 , H01L25/18 , G11C11/4076 , G11C11/4093 , G11C11/4096 , G11C11/22 , G06F11/10 , H01L25/065 , H01L23/50 , G11C5/02 , G11C11/00 , H01L23/14 , G11C11/4097
Abstract: Techniques are described herein for a reconfigurable memory device that is configurable based on the type of interposer used to couple the memory device with a host device. The reconfigurable memory device may include a plurality components for a plurality of configurations. Various components of the reconfigurable memory die may be activated/deactivated based on what type of interposer is used in the memory device. For example, if a first type of interposer is used (e.g., a high-density interposer), the data channel may be eight data pins wide. In contrast, if second type of interposer is used (e.g., an organic-based interposer), the data channel may be four data pins wide. As such, a reconfigurable memory device may include data pins and related drivers that are inactive in some configurations.
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公开(公告)号:US20220374039A1
公开(公告)日:2022-11-24
申请号:US17843244
申请日:2022-06-17
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson
Abstract: Methods, systems, and devices for clock locking for frame-based communications of memory devices are described. A memory system may include a memory device and a host device. The memory device may receive one or more frames of data from the host device, the one or more frames of data communicated by the host device using a first frame clock. The memory device may generate a second frame clock aligned with the one or more frames on receiving the one or more frames and align one or more operations of the memory device with the second frame clock. In some examples, the host device may receive a second set of frames from the memory device based on transmitting the first set of frames. The host device may align one or more operations of the host device with the second set of frames received from the memory device.
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公开(公告)号:US20220121609A1
公开(公告)日:2022-04-21
申请号:US17562550
申请日:2021-12-27
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson , Brent Keeth
IPC: G06F13/42 , G06F15/167
Abstract: Techniques are described herein for a training procedure that identifies a frame boundary and generates a frame clock to identify the beginning and the end of a frame. After the frame training procedure is complete, a memory device may be configured to execute a frame synchronization procedure to identify the beginning of a frame based on the frame clock without the use of headers or other information within the frame during an active session of the memory device. During an activation time period after a power-up event, the memory device may initiate the frame training procedure. Once the frames are synchronized, the memory device may be configured to use that frame clock during an entire active session (e.g., until a power-down event) to identify the beginning of a frame as part of a frame synchronization procedure.
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公开(公告)号:US20210191622A1
公开(公告)日:2021-06-24
申请号:US16951299
申请日:2020-11-18
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson , Brent Keeth
IPC: G06F3/06
Abstract: Methods, systems, and devices for latency offset for frame-based communications are described. A memory system may include a host device and a memory device that communicate using frames based on a frame period of a frame clock. The memory device may receive a read command and a write command from the host device, and determine a read latency and a write latency corresponding to the received commands. The memory device may also determine an additional offset latency to add to the write latency to avoid bus contention between read data and write data associated with the read command and the write command, respectively. The offset latency may correspond to an integer quantity of clock periods, which may be less than the frame period.
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公开(公告)号:US20200159687A1
公开(公告)日:2020-05-21
申请号:US16773784
申请日:2020-01-27
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson , Brent Keeth
IPC: G06F13/42 , G06F15/167
Abstract: Techniques are described herein for a training procedure that identifies a frame boundary and generates a frame clock to identify the beginning and the end of a frame. After the frame training procedure is complete, a memory device may be configured to execute a frame synchronization procedure to identify the beginning of a frame based on the frame clock without the use of headers or other information within the frame during an active session of the memory device. During an activation time period after a power-up event, the memory device may initiate the frame training procedure. Once the frames are synchronized, the memory device may be configured to use that frame clock during an entire active session (e.g., until a power-down event) to identify the beginning of a frame as part of a frame synchronization procedure.
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公开(公告)号:US20150179240A1
公开(公告)日:2015-06-25
申请号:US14639518
申请日:2015-03-05
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson
IPC: G11C7/20 , G11C8/10 , H01L25/065
CPC classification number: G11C7/20 , G11C5/02 , G11C5/04 , G11C7/1072 , G11C8/10 , H01L24/13 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2223/54433 , H01L2223/5444 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/16 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/0002 , H01L2224/05552
Abstract: Apparatus, systems, and methods for configuring a plurality of stacked semiconductor dice with unique identifiers and identifying a die in the stack using the unique identifier are provided. Additional apparatus and methods are disclosed.
Abstract translation: 提供了用于使用唯一标识符配置多个堆叠半导体裸片的设备,系统和方法,并且使用唯一标识符识别堆中的裸片。 公开了附加的装置和方法。
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公开(公告)号:US20240355371A1
公开(公告)日:2024-10-24
申请号:US18607033
申请日:2024-03-15
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson , Brent Keeth , Kunal R. Parekh , Eiichi Nakano , Amy Rae Griffin
CPC classification number: G11C7/1069 , G11C7/222 , G11C29/52
Abstract: Methods, systems, and devices for data path signal amplification in coupled semiconductor systems are described. A semiconductor system may implement a first die including memory arrays and a second die including a host interface. The first die may include a first portion of a data path between the memory arrays and the host interface, including a first portion of data path signal amplification circuitry. The second die may include a second portion of the data path, including a second portion of data path signal amplification circuitry. The semiconductor system may implement fine-pitch interconnection between dies to support a relatively greater quantity of signal paths of the data path which, in some examples, may support reducing or eliminating serialization/deserialization circuitry associated with coarser interconnection. In some implementations, a semiconductor system may implement a switching component operable to switch between data paths having different amplification configurations of the dies.
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公开(公告)号:US20240186274A1
公开(公告)日:2024-06-06
申请号:US18522457
申请日:2023-11-29
Applicant: Micron Technology, Inc.
Inventor: Amy Rae Griffin , Brent Keeth , Kunal R. Parekh , Eiichi Nakano , James Brian Johnson , Ameen D. Akel
IPC: H01L23/00 , H01L23/29 , H01L25/065 , H10B80/00
CPC classification number: H01L24/08 , H01L23/29 , H01L24/80 , H01L25/0657 , H10B80/00 , H01L2224/08145 , H01L2224/80895 , H01L2224/80896
Abstract: Methods, systems, and devices for thermal distribution techniques in coupled semiconductor systems are described. A semiconductor system may be formed by coupling various semiconductor components with one another, and may also implement a semiconductor material to support a thermal path having a thermal conductivity that is relatively close to a thermal conductivity through the coupled semiconductor components of the semiconductor system. Such a semiconductor material may be located in regions of the semiconductor system that are otherwise unoccupied by functional (e.g., electrically operable) semiconductor components and may, in some examples, be electrically inoperable (e.g., may lack functional circuitry). For implementations in which functional semiconductor components are directly coupled (e.g., by fusion bonding or hybrid bonding techniques), the semiconductor material may also be directly coupled with at least one of the semiconductor components.
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公开(公告)号:US20240071556A1
公开(公告)日:2024-02-29
申请号:US17821676
申请日:2022-08-23
Applicant: Micron Technology, Inc.
Inventor: James Brian Johnson , Kunal R. Parekh , Brent Keeth , Eiichi Nakano , Amy Rae Griffin
CPC classification number: G11C29/56004 , G11C7/1039 , G11C29/56016 , G11C2029/5602
Abstract: Methods, systems, and devices for memory with parallel main and test interfaces are described. A memory die may be configured with parallel interfaces that may individually (e.g., separately) support evaluation operations (e.g., before or as part of assembly in a multiple-die stack) or access operations (e.g., after assembly in a multiple die stack). For example, a memory die may include a first set of one or more contacts that support communicating signaling with or via another memory die in a multiple-die stack. The memory die may also include a second set of one or more contacts that support probing for pre-assembly evaluations, which may be electrically isolated from the first set of contacts. By implementing such parallel interfaces, evaluation operations may be performed using the second set of contacts without damaging the first set of contacts, which may improve capabilities for supporting a multiple-die stack in a memory device.
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