Invention Grant
- Patent Title: Methods of forming air spacers in semiconductor devices
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Application No.: US18336561Application Date: 2023-06-16
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Publication No.: US12243940B2Publication Date: 2025-03-04
- Inventor: Chao-Hsun Wang , Chen-Ming Lee , Kuo-Yi Chao , Mei-Yun Wang , Pei-Yu Chou , Kuo-Ju Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L21/762 ; H01L21/764 ; H01L27/088 ; H01L29/417
Abstract:
A semiconductor structure includes a source/drain (S/D) feature disposed in a semiconductor layer, a metal gate stack (MG) disposed in a first interlayer dielectric (ILD) layer and adjacent to the S/D feature, a second ILD layer disposed over the MG, and an S/D contact disposed over the S/D feature. The semiconductor structure further includes an air gap disposed between a sidewall of a bottom portion of the S/D contact and the first ILD layer, where a sidewall of a top portion of the S/D contact is in direct contact with the second ILD layer.
Public/Granted literature
- US20230327021A1 Methods Of Forming Air Spacers In Semicondutor Devices Public/Granted day:2023-10-12
Information query
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