Invention Grant
- Patent Title: Integrated circuit including power gating circuit
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Application No.: US17886194Application Date: 2022-08-11
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Publication No.: US12249984B2Publication Date: 2025-03-11
- Inventor: Changyeon Yu , Pansuk Kwak , Daeseok Byeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2021-0117938 20210903
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F1/26 ; H03K17/687 ; H03K19/00 ; H03K19/003

Abstract:
An integrated circuit includes a logic circuit comprising a plurality of logic transistors, the logic circuit comprising a plurality of logic gate lines extending in a first direction; and a power gating circuit comprising a plurality of power gating transistors, the power gating circuit comprising a first power gate line extending in a second direction that is perpendicular to the first direction, and the power gating circuit being connected to the logic circuit, wherein a plurality of source regions respectively included in the plurality of power gating transistors are connected to each other, or a plurality of drain regions respectively included in the plurality of power gating transistors are connected to each other.
Public/Granted literature
- US20230073878A1 INTEGRATED CIRCUIT INCLUDING POWER GATING CIRCUIT Public/Granted day:2023-03-09
Information query
IPC分类: