Invention Grant
- Patent Title: Semiconductor device and method of forming a slot in EMI shielding with improved removal depth
-
Application No.: US18359688Application Date: 2023-07-26
-
Publication No.: US12255152B2Publication Date: 2025-03-18
- Inventor: ChangOh Kim , JinHee Jung , JiWon Lee , YuJeong Jang
- Applicant: STATS ChipPAC Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee: STATS ChipPAC Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: PATENT LAW GROUP: Atkins and Associates, P.C.
- Agent Brian M. Kaufman; Robert D. Atkins
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L21/3213 ; H01L23/31 ; H01L25/065

Abstract:
A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.
Public/Granted literature
- US20230369241A1 Semiconductor Device and Method of Forming a Slot in EMI Shielding with Improved Removal Depth Public/Granted day:2023-11-16
Information query
IPC分类: