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公开(公告)号：US11715703B2
公开(公告)日：2023-08-01
申请号：US17660093
申请日：2022-04-21
发明人： SungWon Cho , ChangOh Kim , Il Kwon Shim , InSang Yoon , KyoungHee Park
IPC分类号： H01L23/552 , H01L23/31 , H01L23/367 , H01L23/498 , H01L23/50 , H01L23/522 , H01L23/00 , H01L23/36 , H01L23/60 , H01L27/02
CPC分类号： H01L23/552 , H01L23/3107 , H01L23/36 , H01L23/367 , H01L23/49816 , H01L23/50 , H01L23/5225 , H01L23/562 , H01L23/60 , H01L24/26 , H01L27/0248 , H01L2924/181
摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号：US11688697B2
公开(公告)日：2023-06-27
申请号：US17662977
申请日：2022-05-11
发明人： Dong Won Son , Byeonghoon Kim , Sung Ho Choi , Sung Jae Lim , Jong Ho Shin , SungWon Cho , ChangOh Kim , KyoungHee Park
IPC分类号： H01L23/552 , H01L23/31 , H01L23/367 , H01L23/498 , H01L23/00
CPC分类号： H01L23/552 , H01L23/3107 , H01L23/3128 , H01L23/367 , H01L23/49816 , H01L23/562 , H01L24/14 , H01L2224/32225 , H01L2224/73204 , H01L2924/181 , H01L2924/3025
摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号：US11444035B2
公开(公告)日：2022-09-13
申请号：US16991370
申请日：2020-08-12
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
摘要： A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号：US11355452B2
公开(公告)日：2022-06-07
申请号：US17068482
申请日：2020-10-12
发明人： Dong Won Son , Byeonghoon Kim , Sung Ho Choi , Sung Jae Lim , Jong Ho Shin , SungWon Cho , ChangOh Kim , KyoungHee Park
IPC分类号： H01L23/34 , H01L23/28 , H01L21/00 , H05K7/20 , H01L23/552 , H01L23/31 , H01L23/00 , H01L23/498 , H01L23/367
摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号：US20220157739A1
公开(公告)日：2022-05-19
申请号：US16950295
申请日：2020-11-17
发明人： HunTeak Lee , KyungHwan Kim , HeeSoo Lee , ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC分类号： H01L23/552 , H01L21/56
摘要： A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.
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公开(公告)号：US10804217B2
公开(公告)日：2020-10-13
申请号：US16529486
申请日：2019-08-01
发明人： SungWon Cho , ChangOh Kim , Il Kwon Shim , InSang Yoon , KyoungHee Park
IPC分类号： H01L27/14 , H01L21/00 , H01L23/552 , H01L23/00 , H01L23/36 , H01L23/522 , H01L23/50 , H01L23/60 , H01L23/498 , H01L27/02 , H01L23/31
摘要： A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.
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公开(公告)号：US11990424B2
公开(公告)日：2024-05-21
申请号：US18303308
申请日：2023-04-19
发明人： HunTeak Lee , KyungHwan Kim , HeeSoo Lee , ChangOh Kim , KyoungHee Park , JinHee Jung , OMin Kwon , JiWon Lee , YuJeong Jang
IPC分类号： H01L23/552 , H01L21/56 , H01L23/498
CPC分类号： H01L23/552 , H01L21/56 , H01L21/561 , H01L21/568 , H01L23/49822
摘要： A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.
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公开(公告)号：US11935840B2
公开(公告)日：2024-03-19
申请号：US17817461
申请日：2022-08-04
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
CPC分类号： H01L23/552 , H01L21/56 , H01L23/28 , H01L23/66 , H01L24/94 , H01L25/50 , H01L2021/60112
摘要： A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.
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公开(公告)号：US20230402401A1
公开(公告)日：2023-12-14
申请号：US18455419
申请日：2023-08-24
发明人： ChangOh Kim , KyoWang Koo , SungWon Cho , BongWoo Choi , JiWon Lee
IPC分类号： H01L23/552 , H01L21/311 , H01L21/56 , H01L23/31 , H01L23/00 , H01L23/66
CPC分类号： H01L23/552 , H01L21/31144 , H01L21/565 , H01L23/3128 , H01L24/09 , H01L24/17 , H01L23/66 , H01L21/563
摘要： A semiconductor device has a substrate. An electrical component is disposed over a surface of the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the surface of the substrate remains exposed from the encapsulant. A shielding layer is formed over the encapsulant. A portion of the shielding layer is removed to expose the portion of the surface of the substrate.
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公开(公告)号：US20230361103A1
公开(公告)日：2023-11-09
申请号：US18355906
申请日：2023-07-20
发明人： ChangOh Kim , JinHee Jung
IPC分类号： H01L25/00 , H01L21/78 , H01L21/56 , H01L25/065 , H01L23/552
CPC分类号： H01L25/50 , H01L21/78 , H01L21/56 , H01L25/0652 , H01L23/552 , H01L2225/06524
摘要： A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.
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