Invention Grant
- Patent Title: Fin field-effect transistor device having hybrid work function layer stack
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Application No.: US18673615Application Date: 2024-05-24
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Publication No.: US12278288B2Publication Date: 2025-04-15
- Inventor: Chun-Neng Lin , Ming-Hsi Yeh , Hung-Chin Chung , Hsin-Yun Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L27/092 ; H01L29/66
Abstract:
A semiconductor device includes a first fin, a second fin, and a third fin protruding above a substrate, where the third fin is between the first fin and the second fin; a gate dielectric layer over the first fin, the second fin, and the third fin; a first work function layer over and contacting the gate dielectric layer, where the first work function layer extends along first sidewalls and a first upper surface of the first fin; a second work function layer over and contacting the gate dielectric layer, where the second work function layer extends along second sidewalls and a second upper surface of the second fin, where the first work function layer and the second work function layer comprise different materials; and a first gate electrode over the first fin, a second gate electrode over the second fin, and a third gate electrode over the third fin.
Public/Granted literature
- US20240313114A1 FIN FIELD-EFFECT TRANSISTOR DEVICE HAVING HYBRID WORK FUNCTION LAYER STACK Public/Granted day:2024-09-19
Information query
IPC分类:
