Invention Application
- Patent Title: High-voltage switching device and application to a non-volatile memory
- Patent Title (中): 高压开关器件和应用于非易失性存储器
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Application No.: US09996071Application Date: 2001-11-28
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Publication No.: US20020079545A1Publication Date: 2002-06-27
- Inventor: Cyrille Dray , Sigrid Thomas
- Applicant: STMicroelectronics S.A.
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Priority: FR0015447 20001129
- Main IPC: H01L029/74
- IPC: H01L029/74

Abstract:
A high voltage switching device includes a switching circuit for switching a high voltage to an output line and for providing a control signal. The high voltage switching device also includes a switching transistor connected to the switching circuit for switching a low voltage to the output line based upon the control signal. The output signal is controlled by a control circuit that sets up a control loop between the drop in the gate voltage level of the switching transistor and the voltage level of the output line that is controlled by the switching circuit.
Public/Granted literature
- US06639427B2 High-voltage switching device and application to a non-volatile memory Public/Granted day:2003-10-28
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