Invention Application
- Patent Title: Multiple tier array capacitor and methods of fabrication therefor
- Patent Title (中): 多层阵列电容器及其制造方法
-
Application No.: US09751612Application Date: 2000-12-29
-
Publication No.: US20020085334A1Publication Date: 2002-07-04
- Inventor: David G. Figueroa , Kishore K. Chakravorty , Huong T. Do , Larry Eugene Mosley , Jorge Pedro Rodriguez , Ken Brown
- Applicant: Intel Corporation
- Applicant Address: null
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: null
- Main IPC: H01G004/30
- IPC: H01G004/30

Abstract:
A capacitor includes multiple tiers (302, 304, 306, 1210, 1212, 1310, 1312, 1380, FIGS. 3, 12, 13), which provide capacitance to a load at different inductance values. Each tier includes multiple layers (311-325, 1220, 1222, 1320, 1322, 1382, FIGS. 3, 12, 13) of patterned conductive material, which are separated by layers of dielectric material. In one embodiment, tiers are stacked in a vertical direction, and are electrically connected through vias (330, 332, 334, 1230, 1232, FIGS. 3, 12) that extend through some or all of the tiers. In another embodiment, one or more tiers (1310, 1312, FIG. 13) are located in a center region (1404, FIG. 14) of the capacitor, and one or more other tiers (1380, FIG. 13) are located in a peripheral region (1408, FIG. 14) of the capacitor. In that embodiment, the center tiers and peripheral tiers are electrically connected through one or more additional layers (1370, FIG. 13) of patterned conductive material. The capacitors of the various embodiments can be used as discrete devices, which are mountable on or embeddable within a housing (e.g., a package, interposer, socket or PC board), or they can be integrally fabricated within the housing.
Public/Granted literature
- US06532143B2 Multiple tier array capacitor Public/Granted day:2003-03-11
Information query