Invention Application
US20030116427A1 Self-ionized and inductively-coupled plasma for sputtering and resputtering
审中-公开
用于溅射和再溅射的自电离和电感耦合等离子体
- Patent Title: Self-ionized and inductively-coupled plasma for sputtering and resputtering
- Patent Title (中): 用于溅射和再溅射的自电离和电感耦合等离子体
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Application No.: US10202778Application Date: 2002-07-25
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Publication No.: US20030116427A1Publication Date: 2003-06-26
- Inventor: Peijun Ding , Zheng Xu , Roderick C. Mosely , Suraj Rengarajan , Nirmalya Maity , Daniel A. Carl , Barry Chin , Paul F. Smith , Darryl Angelo , Anish Tolia , Jianming Fu , Fusen Chen , Praburam Gopalraja , Xianmin Tang , John C. Forster
- Applicant: Applied Materials, Inc.
- Applicant Address: null
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: null
- Main IPC: C23C014/32
- IPC: C23C014/32 ; C23C014/34
Abstract:
A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.
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